During the Area Selective Deposition Workshop 2025 you will attend 10 different sessions with invited and contributed talks. The conference starts on Sunday with 3 tutorial sessions and is completed with a Special Symposium including a panel discussion on "ASD for the future" where industry and academic perspective will meet and exchange.
You will have ample opportunities to meet and discuss.
Programm Overview
Sunday | Monday | Tuesday | Wednesday |
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8:20 Welcome & Opening | |||
8:30 Session 1 10:00 Coffee Break 10:30 Session 2 | 8:30 Session 5 10:00 Coffee Break 10:30 Session 6 | 8:30 Session 9 9:30 Coffee Break 10:00 Session 10 11:00 Break 11:20 Pannel discussion “ASD for the future” | |
12:00 Start Registration | 12:00 Lunch Break | 12:00 Lunch Break | |
13:00 Tutorial Session 1 14:00 Coffee Break 14:30 Tutorial Session 2 15:30 Break 16:00 Tutorial Session 3 | 13:30 Session 3 15:00 Coffee Break 15:30 Session 4 | 13:30 Session 7 15:00 Coffee Break 15:30 Session 8 | 12:45 Closing & Poster-Price 13:00 Optional Lunch |
17:00 Break | 17:00 Break | 17:00 Break | |
18:00 Mixer with catering | 19:00 Conference dinner Zoo Leipzig, Gondwanaland | 17:30 Poster session |
Detailed Program
Sunday - March 23, 2025 | ||
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12:00 | Start Registration | |
Tutorial Session 1 | ||
13:00 - 14:00 | Michael Nolan - Tyndall Institute, Ireland | First Principles Simulation of Atomic Level Processing Chemistries |
Tutorial Session 2 | ||
14:30 - 15:30 | David Muñoz-Rojas - Université Grenoble Alpes, France | Metrology for ASD |
Tutorial Session 3 | ||
16:00 - 17:00 | Cathy Crudden - Queen's University, Canada | Precursor Chemistry |
18:00 | Mixer with catering |
Monday - March 24, 2025 | ||
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8:20 - 8:30 | Welcome & Opening | |
Session 1 | ||
8:30 - 9:00 | Junjie Zhao - Zhejiang University, China | Invited - Photocatalytic surface initiation strategies for area-selective deposition of polymer thin films |
9:00 - 9:20 | Iryna Kandybka - Imec and KU Leuven, Belgium | Contributed - ASD of 2D tungsten disulfide by chemical vapor deposition for next generation nanoelectonic devices |
9:20 - 9:40 | Olga Partanen - Aalto University, Finland | Contributed - Block Copolymer Approach for Area Selective Atomic-Molecular Layer Deposition |
9:40 - 10:00 | Julia Westermayr - Leipzig University, Germany | Contributed - Machine Learning for Area Selective Deposition |
Session 2 | ||
10:30 - 11:00 | Tania Sandoval - Universidad Tecnica Federico Santa Maria, Chile | Invited - Fundamental insights into inhibition mechanism during ASD processes |
11:00 - 11:20 | Simon Elliott - Schrödinger GmbH | Contributed - Microkinetic modelling of the nucleation and growth of ALD Pt |
11:20 - 11:40 | Bora Karasulu - University of Warwick, United Kingdom | Contributed - Atomistic Simulations of Surface Chemistry Driving Area-Selective ALD Processes through First-Principles and Machine-Learning Techniques |
11:40 - 12:00 | Gregory Parsons - North Carolina State University, USA | Contributed - Towards a “Digital Twin” for Multi-Color ASD |
Session 3 | ||
13:30 - 14:00 | Henrik Pedersen - Linköping University, Sweden | Invited - Getting the molecules to all that room at the bottom |
14:00 - 14:20 | Jonas Valdemar Sundqvist - AlixLabs AB | Contributed - Atomic Layer Etching Pitch Splitting (APS): A Sustainable Alternative to Self-Aligned Double Patterning |
14:20 - 14:40 | Nupur Bihari - Lam Research Corporation | Contributed - Enhancing Area Selective Deposition Through Sub-saturated Atomic Layer Deposition: A Pathway to High Volume Manufacturing |
14:40 - 15:00 | Mira Baraket - ATLANT 3D | Contributed - Advancing Atomic Layer Processing for Next Generation Devices: ATLANT 3D’s Direct Atomic Layer Processing (DALP™) |
Session 4 | ||
15:30 - 16:00 | Il-Kwon Oh - Ajou University, Korea | Invited - Area-selective Atomic Layer Deposition on Homogeneous Surface for Electronic devices |
16:00 - 16:20 | Rachel Nye de Castro - Lam Research Corporation | Contributed - Selective Deposition on Si vs. SiN vs. SiO2 Surfaces |
16:20 - 16:40 | Jeremy Thelven - North Carolina State University, USA | Contributed - Selective ASD of Conjugate Polymer on SiN vs. SiO2 Using Small Molecule Inhibitor and Selective Fluorine Passivation |
16:40 - 17:00 | Summal Zoha - Incheon National University, Republic of Korea | Contributed - Area Selective Atomic Layer Deposition of SiNx on SiO2 by Inhibiting Si3N4 |
19:00 | Conference Dinner Zoo Leipzig, Gondwanaland |
Tuesday - March 25, 2025 | ||
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Session 5 | ||
8:30 - 9:00 | Seán Barry - Carleton University, Canada | Invited - Atomic Layer Restructuring of Gold Surfaces by N-Heterocyclic Carbenes Over Large Surface Areas |
9:00 - 9:20 | Akihiro Nishida - ADEKA Corporation and Hokkaido University, Japan | Contributed - Area-Selective Atomic Layer Deposition of Al2O3 Film on Cu and Si Substrates Using Novel Al Precursor |
9:20 - 9:40 | Rong Chen - Huazhong University of Science and Technology, China | Contributed - Area Selective Deposition of SiAlOx Film for DoD Structures |
9:40 - 10:00 | Stacey Bent - Stanford University, USA | Contributed - Benzenethiol, A Versatile Inhibitor for Area Selective ALD |
Session 6 | ||
10:30 - 11:00 | Marc Merkx - Eindhoven University of Technology, Netherlands | Invited - Area-selective ALD using SMIs: how is selectivity lost? |
11:00 - 11:20 | Hae Lin Yang - Hanyang University, Republic of Korea | Contributed - Structural Design and Performance Evaluation of Phenyl(Alkyl)trimethoxysilanes as Small Molecular Inhibitors for Area-Selective Atomic Layer Deposition of VO₂ |
11:20 - 11:40 | Paul Lemaire - Lam Research Corporation | Contributed - Characterizing Inhibitor Surface Reactions with ATR-FTIR for Selective Deposition |
11:40 - 12:00 | Ludovic Hahn - CEA-Leti and Hummink, France | Contributed - Comprehensive study of the exclusion zone observed with area-selective ALD of transparent conducting oxides by using polymer patterns |
Session 7 | ||
13:30 - 14:00 | Marleen van der Veen - Imec Leuven, Belgium | Invited - Area Selective Metal Deposition in Nanointerconnects for Future Technology Nodes |
14:00 - 14:20 | Matthias M. Minjauw - Ghent University, Belgium | Contributed - Area-selective atomic layer deposition of Ru and RuO2 |
14:20 - 14:40 | Sundas Ismaeel - University of Helsinki, Finland | Contributed - Area Selective Atomic Layer Deposition of ruthenium with phenol as a small molecule inhibitor |
14:40 - 15:00 | Kyeongmin Min - Incheon National Univeristy, Republic of Korea | Contributed - Hot Wire Assisted Area Selective Deposition of Ruthenium |
Session 8 | ||
15:30 - 16:00 | Jeongwon Park - Korea Advanced Institute of Science and Technology, Korea | Invited - Area-selective deposition based on 2D van der Waals materials |
16:00 - 16:20 | Annelies Delabie - Imec and KU Leuven, Belgium | Contributed - Inherent and self-confined area-selective deposition of Ru on monolayer thin WS2 crystals |
16:20 - 16:40 | Arthur de Jong - Eindhoven University of Technology, Netherlands | Contributed - A physical approach to enhancing the selectivity of SiO2 area-selective deposition using substrate-biasing |
17:30 - 19:00 | Poster Session |
Wednesday - March 26, 2025 | ||
Session 9 - Industry-Symposium | ||
8:30 - 8:50 | Vina Faramarzi - ASML | |
8:50 - 9:10 | Venkat Pallem - Air Liquide | |
9:10 - 9:30 | Kandabara Tapily - TEL | |
Session 10 - Industry-Symposium | ||
10:00 - 10:20 | Ron Perlstein - Merck KGaA | |
10:20 - 10:40 | Bhaskar Bhuyan - Applied Materials | |
10:40 - 11:00 | Oliver Briel - DockChemicals | |
11:20 - 12:45 | Panel Discussion - “ASD for the Future” Chair: Adrie Mackus Annelies Delabie, Dennis Hausmann, Erwin Kessels, Greg Parsons, Ron Perlstein, and Stacey Bent | |
12:45 - 13:00 | Closing & Poster-Price |